ROHM has released N-channel MOSFETs – RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB – featuring low ON-resistance ideal for a variety of automotive applications, including motors for doors and seat positioning, as well as LED headlights. Sales have begun with 10 models across 3 package types, with plans to expand the lineup in the future.
The automotive sector is seeing a surge in the number of electronic components, driven by the demand for enhanced safety and convenience. At the same time, there is a pressing need for improved power efficiency to optimize fuel and electricity consumption. Especially for MOSFETs essential for switching applications in automotive systems, there is a growing requirement for lower ON resistance to minimize loss and heat generation.
ROHM, which has been supplying low ON-resistance MOSFETs for consumer and industrial equipment, has now extended this technology to the automotive sector. Adapting cutting-edge medium voltage processes to meet the stringent reliability requirements of automotive products allowed us to develop 10 N-channel MOSFET models characterized by low ON resistance.
Offered in voltage ratings of 40V, 60V, and 100V, the new products incorporate a split-gate structure to achieve low ON-resistance, contributing to higher efficiency operation in automotive applications. All models are qualified under the AEC-Q101 automotive reliability standard, guaranteeing exceptional high reliability.
Users can select from among three package types, depending on the application. For space-constrained sets like Advanced Driver Assistance Systems (ADAS), the compact DFN2020Y7LSAA (2.0mm × 2.0mm) and HSMT8AG (3.3mm × 3.3mm) packages are ideal. For automotive power applications, the widely used TO-252 (DPAK) package (6.6mm × 10.0mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package.
Going forward, ROHM plans to expand its lineup of medium-voltage N-channel MOSFETs to provide even greater miniaturization and higher efficiency in automotive applications. Mass production of the DFN3333 (3.3mm × 3.3mm) and HPLF5060 (5.0mm × 6.0mm) packages is scheduled for October 2024, followed by 80V products in 2025. P-channel products are also scheduled for future release.
Product Lineup
| Part No. | VDSS [V] |
ID [A] |
RDS(on) [mΩ] | Qg [nC] | Ciss [pF] |
Tj Max. [℃] |
Package※2 [mm] |
Automotive Grade (AEC-Q101 qualified) |
||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VGS=10V | VGS=4.5V | VGS=10V | ||||||||||
| Typ. | Max. | Typ. | Max. | Typ. | ||||||||
| NEW |
Buy Datasheet |
40 | 12 | 13.5 | 17.5 | 19.6 | 26 | 8.5 | 470 | 150 |
 （DFN2020Y7LSAA） [2.0×2.0×0.6] |
YES |
| NEW |
Buy Datasheet |
60 | 23 | 30 | 31 | 42 | 7.3 | 440 | ||||
| NEW |
Buy Datasheet |
40 | 27 | 7.4 | 9.6 | 10 | 13.9 | 19 | 1030 | 150 |
 （HSMT8AG） [3.3×3.3×0.8] |
|
| NEW |
Buy Datasheet |
60 | 11.3 | 14.6 | 14.8 | 21 | 15 | 990 | ||||
| NEW |
Buy Datasheet |
11.3 | 14.7 | 13.8※1 | 19.3※1 | 15 | 1080 | |||||
| NEW |
Buy Datasheet |
12 | 23 | 30 | 31 | 43 | 7.3 | 440 | ||||
| NEW |
Buy Datasheet |
100 | 27 | 21 | 27 | 26 | 36 | 13.6 | 670 | |||
| NEW |
Buy Datasheet |
40 | 80 | 2.4 | 3.1 | 3.6 | 6.1 | 41 | 2570 | 175 |
 TO-252 （TO-252） <DPAK> [6.6×10.0×2.2] |
|
| NEW |
Buy Datasheet |
60 | 40 | 10.4 | 13.5 | 15 | 21 | 13 | 760 | |||
| NEW |
Buy Datasheet |
100 | 59 | 12.1 | 15.8 | 15.6 | 22 | 17.3 | 1110 | |||
※1：VGS=6.0V
※2： Package types are basically indicated by JEDEC code, ROHM package with ( ), GENERAL code with < >.
Application Examples
- ◇ Vehicle motors (e.g., doors, seat positioning, power windows)
- ◇ LED headlights
- ◇ Car infotainment / displays
- ◇ Advanced Driver Assistance Systems (ADAS)
Terminology
- ON resistance (Ron)
- The resistance value between the Drain and Source while the MOSFET is ON. The smaller this value is, the lower the (power) loss during conduction.
- N-channel MOSFET
- A type of MOSFET that conducts when a positive voltage is applied to the Gate relative to the Source. N-channel MOSFETs are more widely adopted in the market today due to their lower ON-resistance (RDS(on)) over P-channel variants, facilitating use in a broad range of circuits.
- Split Gate Structure
- A technology that divides the gate of the MOSFET into multiple parts to efficiently regulate the flow of electrons. This ensures fast, reliable operation.
- Wettable Flank Technology
- A technique for plating the sides of the lead frame on bottom electrode packages to improve mounting reliability.
- Gull Wing Leads
- A terminal structure that spreads outwards from both sides of the package. It achieves excellent heat dissipation along with increased mounting reliability.
