ROHM has developed power stage ICs with built-in 650V GaN HEMTs and gate driver – the BM3G0xxMUV-LB series. The devices are ideal for primary power supplies inside industrial and consumer applications such as data servers and AC adapters.
Consumer and industrial sectors more and more demand greater energy savings to achieve a sustainable society in the last few years. However, while GaN HEMTs are expected to significantly contribute to greater miniaturization and improved power conversion efficiency, the difficulty in handling the gate compared to silicon MOSFETs requires the use of a dedicated gate driver. In response, ROHM developed power stage ICs that integrate GaN HEMTs and gate drivers into a single package by leveraging core power and analog technologies, facilitating mounting considerably.
On top, the BM3G0xxMUV-LB series (BM3G015MUV-LB, BM3G007MUV-LB) incorporates additional functions and peripheral components designed to maximize GaN HEMT performance along with 650V GaN HEMTs – the next generation of power devices. And ROHM’s features such as a wide drive voltage range (2.5V to 30V) enable compatibility with virtually any controller IC in primary power supplies – facilitating replacement of existing silicon (Super Junction) MOSFETs. This makes it possible to simultaneously reduce component volume and power loss by approx. 99% and 55%, respectively, achieving higher efficiency in a smaller size.
ISAAC LIN, General Manager, PSADC (Power Semiconductor Applications Development Center), Delta Electronics, Inc.
GaN devices are attracting a great deal of attention in the industries as a device that greatly contributes to the miniaturization and energy saving of equipment. The ROHM’s new products have realized high speed and safe gate drive by using ROHM’s original analog technology. These products will further promote the use of GaN power devices, which are expected to grow.
A wide drive voltage range (2.5V to 30V), short propagation delay, and fast startup time enable compatibility with virtually any controller IC in primary power supplies.
※ID=0.5A, VIN=5 V, Ta=25℃
The BM3G015MUV-EVK-003 evaluation board consists of the BM3G015MUV (GaN FET (650V 150mΩ), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
The BM3G007MUV-EVK-002 reference board outputs 400V voltage from the input of 90 Vac to 264 Vac. The output current supplies up to 0.6A. BM3G007MUV has a built-in GaN HEMT (650V 70mΩ), driver and protection circuit. By using this GaN Power Stage, we achieved a maximum efficiency of 97.8%. The BD7695FJ which is BCM method PFC controller IC is used. The BD7695FJ supplies the system which is suitable for all of products that requires PFC. BCM is used for PFC part, and Zero Current Detection reduces both switching loss and noise. THD is 8.4% typical.
The BM3G007MUV-EVK-003 evaluation board consists of the BM3G007MUV (GaN FET (650V 70mΩ), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
Consumer: Home appliances, AC adapters, PCs, TVs, Refrigerators, Air conditioners
Industrial: Servers, Office automation devices
Refers to ROHM’s new lineup of GaN devices that contribute to energy conservation and miniaturization by maximizing GaN characteristics to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.
・EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.
- Primary Power Supply
- The power supply that is isolated from the output block (i.e. by a transformer) to ensure safety in industrial and consumer applications. As the power supply block across the insulation layer is called the primary side (with the output block called the secondary side), the power supply on the primary side is referred to the primary power supply.
- GaN HEMT
- GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is beginning to see adoption due to its superior properties (over silicon), such as excellent high-frequency characteristics. HEMT stands for High Electron Mobility Transistor.
- Super Junction MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
- A type of transistor, MOSFETs can be divided by device structure into DMOSFET, planar, and super junction topologies. Super junction MOSFETs deliver superior breakdown voltage and output current than both DMOSFETs and planar types while also featuring lower loss when handling large power.